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MMBT5550晶体管资料
- MMBT5550别名:MMBT5550三极管、MMBT5550晶体管、MMBT5550晶体三极管 
- MMBT5550生产厂家:美国摩托罗拉半导体公司 
- MMBT5550制作材料: 
- MMBT5550性质:低频或音频放大 (LF)_宽频带放大 (A) 
- MMBT5550封装形式: 
- MMBT5550极限工作电压:160V 
- MMBT5550最大电流允许值:0.6A 
- MMBT5550最大工作频率:<1MHZ或未知 
- MMBT5550引脚数: 
- MMBT5550最大耗散功率:0.3W 
- MMBT5550放大倍数: 
- MMBT5550图片代号:NO 
- MMBT5550vtest:160 
- MMBT5550htest:999900 
- MMBT5550atest:0.6
- MMBT5550wtest:0.3 
- MMBT5550代换 MMBT5550用什么型号代替:3DK104F, 
MMBT5550价格
参考价格:¥0.1339
型号:MMBT5550 品牌:FAIRCHILD 备注:这里有MMBT5550多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT5550批发/采购报价,MMBT5550行情走势销售排行榜,MMBT5550报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| MMBT5550 | NPN (HIGH VOLTAGE TRANSISTOR) NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR | Samsung 三星 | ||
| MMBT5550 | HIGH VOLTAGE TRANSISTOR NPN SILICON High Voltage Transistor NPN Silicon | ZOWIE 智威 | ||
| MMBT5550 | NPN General Purpose Amplifier NPN General Purpose Amplifier • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. | Fairchild 仙童半导体 | ||
| MMBT5550 | High Voltage NPN Transistors High Voltage NPN Transistors P/b Lead(Pb)-Free | WEITRON | ||
| MMBT5550 | Surface Mount General Purpose Si-Epi-Planar Transistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | ||
| MMBT5550 | High Voltage Transistors Features ● NPN Silicon | KEXIN 科信电子 | ||
| MMBT5550 | TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES ● High Voltage Transistor | HTSEMI 金誉半导体 | ||
| MMBT5550 | NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● High voltage transistors. ● General purpose application. | BILIN 银河微电 | ||
| MMBT5550 | NPN Plastic Encapsulate Transistor Features • Halogen free available upon request by adding suffix -HF • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=160V • Operating And Storage Temperatures –55°C to 150°C • Capable of 225mWatts of Power Dissipation • Marking: M1F • Lead Free Finish/RoHS Compliant (P Suf | MCC | ||
| MMBT5550 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High Voltage Transistor | JIANGSU 长电科技 | ||
| MMBT5550 | High Voltage Transistors High Voltage Transistors FEATURE ● We declare that the material of product compliance with RoHS requirements. | LEIDITECH 雷卯电子 | ||
| MMBT5550 | NPN General Purpose Amplifier FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● High voltage transistors. ● General purpose application. | LUGUANG 鲁光电子 | ||
| MMBT5550 | NPN Silicon NPN Silicon | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
| MMBT5550 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 140V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
| MMBT5550 | NPN小信号三极管 | CHINABASE 创基电子 | ||
| MMBT5550 | 小信号双极型晶体管 | MCC | ||
| MMBT5550 | 晶体管 | JSCJ 长晶科技 | ||
| MMBT5550 | NPN General Purpose Amplifier 文件:170.67 Kbytes Page:4 Pages | BILIN 银河微电 | ||
| MMBT5550 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件:279.47 Kbytes Page:5 Pages | RECTRON 丽正国际 | ||
| MMBT5550 | High Voltage Transistors NPN Silicon 文件:127.52 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
| High Voltage Transistors High Voltage Transistors Lead free product FEATURE ● We declare that the material of product compliance with RoHS requirements. | ZOWIE 智威 | |||
| High Voltage Transistors High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
| High Voltage Transistors(NPN Silicon) High Voltage Transistors NPN Silicon | LRC 乐山无线电 | |||
| High Voltage Transistors High Voltage Transistors NPN Silicon | Motorola 摩托罗拉 | |||
| High Voltage Transistors(NPN Silicon) High Voltage Transistors NPN Silicon Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
| High Voltage Transistors High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
| High Voltage Transistors High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
| NPN General Purpose Amplifier 文件:170.67 Kbytes Page:4 Pages | BILIN 银河微电 | |||
| High Voltage Transistors Lead free product Halogen-free type 文件:184.54 Kbytes Page:4 Pages | ZOWIE 智威 | |||
| High Voltage Transistors 文件:97.56 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
| High Voltage Transistors 文件:97.56 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
| High Voltage Transistors NPN Silicon 文件:127.52 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
| 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 140V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
| High Voltage Transistors NPN Silicon 文件:127.52 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
| Cold Shrink] Rubber Splicing Kits 1. Product Description 3M] 5550 Series Cold Shrink] Rubber Splicing Kits are designed for splicing 5/8 kV shielded and non-shielded, solid dielectric, power cables. Each kit contains all the materials (except connectors) required to construct 3 single-conductor splices on tape shield, wire sh | 3M | |||
| HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE 
 | SEMTECH 先之科 | |||
| Aluminum Electrolytic Capacitors 文件:5.29445 Mbytes Page:66 Pages | KEMETKEMET Corporation 基美 | |||
| 8-slot PC-based Controller with GX2 CPU 文件:616.62 Kbytes Page:2 Pages | ADVANTECH 研华科技 | |||
| 2-Channel Motor Driver for DSC 文件:264.5 Kbytes Page:10 Pages | Aimtron | 
MMBT5550产品属性
- 类型描述 
- 型号MMBT5550 
- 功能描述两极晶体管 - BJT NPN Si Transistor Epitaxial 
- RoHS否 
- 制造商STMicroelectronics 
- 晶体管极性PNP 集电极—基极电压 
- VCBO集电极—发射极最大电压 
- VCEO- 40 V 发射极 - 基极电压 
- VEBO- 6 V 
- 增益带宽产品fT直流集电极/Base Gain hfe 
- Min100 A 
- 安装风格SMD/SMT 
- 封装/箱体PowerFLAT 2 x 2 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| ON/安森美 | 23+ | SOT-23 | 8215 | 原厂原装 | |||
| FAIRCHILD/仙童 | 25+ | SOT-23 | 32000 | FAIRCHILD/仙童全新特价MMBT5550即刻询购立享优惠#长期有货 | |||
| ON/安森美 | 24+ | SOT-23(SOT-23-3) | 30000 | 原装正品公司现货,假一赔十! | |||
| ON/安森美 | 25+ | 25000 | 原厂原包 深圳现货 主打品牌 假一赔百 可开票! | ||||
| ON(安森美) | 24+ | 标准封装 | 8000 | 原厂原装,价格优势,欢迎洽谈! | |||
| ON/安森美 | 2023+ | SOT-23(SOT-23-3) | 84000 | 专注全新正品,优势现货供应 | |||
| onsemi(安森美) | 24+ | SOT-23(TO-236) | 7957 | 原厂订货渠道,支持BOM配单一站式服务 | |||
| FSC/ON | 23+ | 原包装原封 □□ | 80871 | 原装进口特价供应  特价,原装元器件供应,支持开发样品 更多详细咨询 库存 | |||
| ON/安森美 | 20+ | SOT-23-3 | 120000 | ||||
| ON(安森美) | 25+ | 标准封装 | 8000 | 原装,请咨询 | 
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MMBT5550规格书下载地址
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MMBT5550数据表相关新闻
- MMBT5551-7-F全新原装现货- MMBT5551-7-F集电极—发射极很大电压 VCEO: 160 V 集电极—基极电压 VCBO: 180 V 发射极 - 基极电压 VEBO: 6 V 集电极—射极饱和电压: 200 mV 很大直流电集电极电流: 600 mA Pd-功率耗散: 300 mW 增益带宽产品fT: 300 MHz 2022-3-22
- MMBT5551 支持原装现货订货型号 SOT-23- MMBT5551 CJ/长电 SOT-23 2021-4-22
- MMBT4403 CJ/长电 SOT-23 支持原装长电现货订货,欢迎咨询- MMBT4403 CJ/长电 SOT-23 2021-3-9
- MMBT5551- MMBT5551,全新原装当天发货或门市自取0755-82732291. 2020-7-1
- MMBT4403:24000PCS,原装现货- MMBT4403 品牌:CJ 数量:24000PCS 公司热卖原装现货 2019-10-23
- MMBT5401- MMBT5401丝印 2L ,全新原装当天发货或门市自取0755-82732291. 2019-3-23
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