位置：首页 > IC中文资料第8955页 > FMB857B_Q
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
857 Series High Temp Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio | EDAC 亚得电子 |   | ||
General Purpose Transistor Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified. | COMCHIP 典琦 | | ||
General Purpose Transistor Features - For AF input stages and driver applications. - High current gain. - Low collector-emitter saturation voltage. - Low noise between 30Hz and 15kHz. - AEC-Q101 Qualified. | COMCHIP 典琦 | | ||
General Purpose Transistor Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified. | COMCHIP 典琦 | | ||
boxes and ancillary products 文件：3.51246 Mbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
FMB857B_Q产品属性
- 类型
描述
- 型号
FMB857B_Q
- 功能描述
两极晶体管 - BJT PNP Epitaxial Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL/英特尔 |
23+ |
FBGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
AMI |
25+ |
PLCC |
3000 |
强调现货,随时查询! |
|||
AMI |
2447 |
PLCC |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
AMIS |
23+ |
PLCC44 |
50000 |
全新原装正品现货,支持订货 |
|||
AMIS |
18+ |
PLCC44 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
24+ |
5000 |
公司存货 |
|||||
KEYSTONE |
25+ |
连接器 |
2963 |
就找我吧!--邀您体验愉快问购元件! |
|||
Qualtek Electronics Corp. |
2022+ |
1 |
全新原装 货期两周 |
||||
AMI |
9899 |
PLCC |
17 |
原装现货 |
|||
24+ |
SSOP |
6540 |
原装现货/欢迎来电咨询 |
FMB857B_Q规格书下载地址
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2019-12-4
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