Emitter common Dual digital transistors

Features 1) Two DTA144E transistors in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half.

Complex Transistor (Digital Transistors)

X-BAND LNA MMIC

GENERAL DESCRIPTION: The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the

Emitter common (dual digital transistors)

Features 1) Two DTA144E transistors in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half.

Emitter common Dual digital transistors

Features 1) Two DTA144E transistors in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half.

Built-In Biasing Resistors, R1 = R2 = 47kW.

Features 1) Two DTA144E transistors in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half.

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTA144E transistors in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half.

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTA144E transistors in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half.

X-BAND LNA MMIC

文件：389.52 Kbytes Page：5 Pages

X-BAND LNA MMIC

文件：389.52 Kbytes Page：5 Pages

HIGH-GAIN X-BAND MMIC

文件：221.17 Kbytes Page：4 Pages

HIGH GAIN X-BAND MMIC AMPLIFIER

文件：347.46 Kbytes Page：5 Pages

HIGH-GAIN X-BAND MMIC

HIGH GAIN X-BAND MMIC AMPLIFIER

文件：347.46 Kbytes Page：5 Pages

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包装：托盘 描述：CONN EDGE DUAL FMALE 56POS 0.125 连接器，互连器件 边缘板连接器

包装：管件 描述：CONN EDGE DUAL FMALE 56POS 0.125 连接器，互连器件 边缘板连接器