X-BAND LNA MMIC

GENERAL DESCRIPTION: The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the

X-Band LNA MMIC

The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output ports are DC decoupled. Grounding of the amplifier is provided • 0 GHz to 11.0 GHz Operating Bandwidth\n• 3 dB Noise Figure\n• 21 dB Small-Signal Gain\n• 14 dBm Output Power\n• +3 V Single Bias Supply\n• DC-Decoupled Input and Output Ports;

X-BAND LNA MMIC

文件：389.52 Kbytes Page：5 Pages

X-BAND LNA MMIC

文件：389.52 Kbytes Page：5 Pages

Dual voltage comparator

DESCRIPTION The LM319 series are precision high-speed dual comparators fabricated on a single monolithic chip. They are designed to operate over a wide range of supply voltages down to a single 5V logic supply and ground. Further, they have higher gain and lower input currents than devices like

HIGH SPEED DUAL COMPARATORS

DESCRIPTION These products are precision high speed dual comparators designed to operate overa wide range of supply voltages down to a single 5V logic supply and ground and have low input currents and high gains. The open collector of the output stage makes compatible with TTL as well as capable

HIGH SPEED DUAL COMPARATORS

DESCRIPTION These products are precision high speed dual comparators designed to operate overa wide range of supply voltages down to a single 5V logic supply and ground and have low input currents and high gains. The open collector of the output stage makes compatible with TTL as well as capable

Silicon Power Transistor Audio Power Amp, Medium Speed Switch

Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: • DC Current Gain: hFE = 20 – 70 @ IC = 4A • Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max

High Speed Dual Comparator

文件：329.59 Kbytes Page：11 Pages