Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

SILICON EPITAXIAL PLANCE TYPE

FEATURES • Plastic package has Underwriters Laboratory • Flammability classification 94V-0 Utilizing Fame • Retardant Epoxy Molding Compound • For surface mount applications • Exceeds environmental standards of MIL-S-19500/228 • Low leakage current.

Chip Schottky Barrier Diodes

Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage curren

Chip Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

SMD Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

Chip Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 /228 Low leakage curr

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes)

文件：29.36 Kbytes Page：2 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：1.46127 Mbytes Page：9 Pages

High efficiency PFM synchronous step-up DC/DC converter

文件：619.31 Kbytes Page：7 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：33.91 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：91.96 Kbytes Page：6 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere

文件：34.5 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 2.0 Ampere

文件：363.6 Kbytes Page：4 Pages

Chip Schottky Barrier Rectifier

文件：165.86 Kbytes Page：7 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：20.63 Kbytes Page：2 Pages

2A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-200V

文件：640.04 Kbytes Page：3 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：884.84 Kbytes Page：6 Pages

Non-isolated step-down active PFC LED driver chip

文件：256.8 Kbytes Page：6 Pages

Non-isolated step-down active PFC LED driver chip

文件：326.63 Kbytes Page：6 Pages

Reverb processor chip

文件：133.97 Kbytes Page：6 Pages

Reverb processor chip

文件：302.6 Kbytes Page：6 Pages

8Mbit F-RAM Memory

文件：173.84 Kbytes Page：13 Pages

8Mbit F-RAM Memory

文件：220.76 Kbytes Page：13 Pages

8Mbit F-RAM Memory

文件：173.84 Kbytes Page：13 Pages

8Mbit F-RAM Memory

文件：220.76 Kbytes Page：13 Pages

封装/外壳：48-TFBGA 包装：卷带（TR） 描述：IC FRAM 8MBIT PARALLEL 48FBGA 集成电路（IC） 存储器