Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip SchottkyBarrier Diodes

Silicon epitaxialplaner type Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame\nRetardant Epox y M olding Compound.\nFor surfac e mounted applications.\nEx ceeds environmental standards of M IL-S- 19500 / 228\nLow leakage current .;

Schottky Diodes

分立

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes)

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Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

SILICON EPITAXIAL PLANCE TYPE

FEATURES • Plastic package has Underwriters Laboratory • Flammability classification 94V-0 Utilizing Fame • Retardant Epoxy Molding Compound • For surface mount applications • Exceeds environmental standards of MIL-S-19500/228 • Low leakage current.

Chip Schottky Barrier Diodes

Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage curren

Chip Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

SMD Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

Chip Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 /228 Low leakage curr

Small Signal MOSFET

丝印代码：S4；N-Channel Enhancement Mode Field Effect Transistor

文件：1.46127 Mbytes Page：9 Pages

High efficiency PFM synchronous step-up DC/DC converter

文件：619.31 Kbytes Page：7 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：33.91 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：91.96 Kbytes Page：6 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 2.0 Ampere

文件：34.5 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 2.0 Ampere

文件：363.6 Kbytes Page：4 Pages

Chip Schottky Barrier Rectifier

文件：165.86 Kbytes Page：7 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：20.63 Kbytes Page：2 Pages

2A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-200V

文件：640.04 Kbytes Page：3 Pages

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interruptor in telephone sets • Relay, high speed and line transfor

Silicon Controlled Rectifier (SCR) TV Deflection Circuit

Features: • CTV 110° – CRT Horizontal Deflection • Tracer Switch

2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Transistor array to drive the small motor

■ Features ● Small and lightweight ● Low power consumption ● Low-voltage drive ● With 4 elements incorporated ■ Applications ● For motor drives ● Small motor drive circuits in general