HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 0.54Ω ● ID .......................................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 0.54Ω ● ID .......................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.54 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

Power MOSFETs