HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 450V ● rDS (ON) (MAX) ............................................................. 0.65Ω ● ID ........................................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 450V ● rDS (ON) (MAX) ............................................................. 0.65Ω ● ID ........................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Power MOSFETs

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................450V • rDS (ON) (MAX) .............................................................. 0.52Ω • ID ..................................................................................

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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