HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................500V • rDS (ON) (MAX) .............................................................. 0.80Ω • ID ....................................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................500V • rDS (ON) (MAX) .............................................................. 0.80Ω • ID ....................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=14A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

Power MOSFETs

HIGH-SPEED SWITCHING USE Nch POWER MOSFET

文件：71.41 Kbytes Page：4 Pages

MITSUBISHI POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET

文件：71.11 Kbytes Page：5 Pages