型号 功能描述 生产厂家&企业 LOGO 操作

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................1.13Ω ●ID.......................................................................................

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................1.13Ω ●ID.......................................................................................

POWEREX

Powerex Power Semiconductors

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................1.13Ω ●ID.......................................................................................

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................1.18Ω ●ID.......................................................................................

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................1.18Ω ●ID.......................................................................................

POWEREX

Powerex Power Semiconductors

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................600V ●rDS(ON)(MAX)..............................................................1.18Ω ●ID.......................................................................................

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.92Ω ●ID.......................................................................................

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

Mitsubishi

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.92Ω ●ID.......................................................................................

POWEREX

Powerex Power Semiconductors

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.92Ω ●ID.......................................................................................

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.92Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGH-SPEED SWITCHING USE

文件:111.96 Kbytes Page:8 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

文件:112.24 Kbytes Page:8 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

文件:112.68 Kbytes Page:8 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

FK10UM产品属性

  • 类型

    描述

  • 型号

    FK10UM

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    MITSUBISHI Nch POWER MOSFET

更新时间:2025-8-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENEAS
24+
NA/
3560
原装现货,当天可交货,原型号开票
VB
25+
TO-220AB
5010
原装正品,假一罚十!
M
25+
TO-TO-220AB
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MIT
24+
TO-220
1200
三菱
06+
TO-220
6000
原装
VBsemi
24+
TO220
9000
只做原装正品 有挂有货 假一赔十
MITSUBISHI/三菱
23+
TO-220
2000000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MITSUBISHI
24+
TO-263
4200
只做原装正品现货 欢迎来电查询15919825718
RENEAS
23+
TO-263
8650
受权代理!全新原装现货特价热卖!
三菱/MIT
22+
TO-220AB
25000
只做原装进口现货,专注配单

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