型号 功能描述 生产厂家 企业 LOGO 操作

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 1.13Ω ● ID .......................................................................................

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 1.13Ω ● ID .......................................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 1.13Ω ● ID .......................................................................................

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID .......................................................................................

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID .......................................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................600V ● rDS (ON) (MAX) .............................................................. 1.18Ω ● ID .......................................................................................

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.92Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

文件:111.96 Kbytes Page:8 Pages

RENESAS

瑞萨

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

文件:112.24 Kbytes Page:8 Pages

RENESAS

瑞萨

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

Mitsubishi

三菱电机

HIGH-SPEED SWITCHING USE

文件:112.68 Kbytes Page:8 Pages

RENESAS

瑞萨

FK10UM产品属性

  • 类型

    描述

  • 型号

    FK10UM

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    MITSUBISHI Nch POWER MOSFET

更新时间:2025-12-28 20:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
25+23+
TO263
74943
绝对原装正品现货,全新深圳原装进口现货
RENEAS
24+
NA/
3560
原装现货,当天可交货,原型号开票
VB
25+
TO-220AB
5010
原装正品,假一罚十!
MIT
24+
TO-220
1200
VBsemi
24+
TO220
9000
只做原装正品 有挂有货 假一赔十
RENEAS
22+
TO-263
20000
公司只做原装 品质保障
RENEAS
24+
TO-263
16900
原装正品现货支持实单
VBsemi
21+
TO220
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
M
22+
TO-220AB
6000
十年配单,只做原装
RENEAS
2023+
TO-263
8800
正品渠道现货 终端可提供BOM表配单。

FK10UM数据表相关新闻