isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

HIGH-SPEED SWITCHING USE

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HIGH-SPEED SWITCHING USE

文件：59.63 Kbytes Page：5 Pages

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 600V ● rDS (ON) (MAX) .............................................................. 0.94Ω ● ID ......................................................................................

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 600V ● rDS (ON) (MAX) .............................................................. 0.94Ω ● ID ......................................................................................