HIGH-SPEED SWITCHING USE

● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 1.13Ω ● ID ......................................................................................... 10A ● Integrated Fast

HIGH-SPEED SWITCHING USE

● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 1.13Ω ● ID ......................................................................................... 10A ● Integrated Fast

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Power MOSFETs

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE • VDSS ................................................................................ 500V • rDS (ON) (MAX) .............................................................. 0.90Ω • ID .................................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................ 500V • rDS (ON) (MAX) .............................................................. 0.90Ω • ID .................................................................................