HIGH-SPEEDSWITCHINGUSE

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................1.13Ω ●ID.........................................................................................10A ●IntegratedFast

HIGH-SPEEDSWITCHINGUSE

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................1.13Ω ●ID.........................................................................................10A ●IntegratedFast

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

MITSUBISHINchPOWERMOSFET

HIGH-SPEEDSWITCHINGUSE •VDSS................................................................................500V •rDS(ON)(MAX)..............................................................0.90Ω •ID.................................................................................

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE •VDSS................................................................................500V •rDS(ON)(MAX)..............................................................0.90Ω •ID.................................................................................