NPN Epitaxial Silicon Transistor

Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJY4003R

封装/外壳：SC-89，SOT-490 包装：卷带（TR） 描述：TRANS PREBIAS NPN 200MW SOT523F 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

3 Watts - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

10 MHz Sine/Square Wave Generator

[B&K Precision Corp.] 10 MHz Sine/Square Wave Generator The model 3003 signal generator is a cost-effective signal source that delivers clean and accurate DC to 10 MHz waveforms with frequency accuracy of 0.02 and 0.1Hz frequency resolution. Eight push wheel switches enable the user to quick

RF Manual 16th edition

10 MHz Sine/Square Wave Generator

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