高压平面MOS

900V N-Channel MOSFET-T

文件：2.10812 Mbytes Page：8 Pages

900V N-Channel MOSFET

文件：2.19176 Mbytes Page：8 Pages

场效应管 / 高压MOSFERs

功率MOS/高压功率MOS

900V N-Channel MOSFET-T

文件：2.31293 Mbytes Page：8 Pages

Power MOSFET

DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 1.2Ω @ VGS=10V, ID=4.5A * U

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 9N90 is a three-terminal silicon device with current conduction capability of 9A, fast switchi

900V N-CHANNEL MOSFET

文件：299.08 Kbytes Page：6 Pages

9A, 900V N-CHANNEL POWER MOSFET

文件：255.65 Kbytes Page：6 Pages

9A900V N-CHANNEL MOSFET

文件：178.3 Kbytes Page：7 Pages