NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

文件：484.56 Kbytes Page：8 Pages

RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

文件：484.56 Kbytes Page：8 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：托盘 描述：RF TRANS NPN 10V 8GHZ 6MCP 分立半导体产品 晶体管 - 双极（BJT）- 射频

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP