RF Transistor

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package • Optimal for differential amplification due to excellent thermal

NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one p

RF Transistor

RF Transistor

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package • Optimal for differential amplification due to excellent thermal

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：托盘 描述：RF TRANS 2 NPN 10V 7GHZ 6MCP 分立半导体产品 晶体管 - 双极（BJT）- 射频

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive

JFET VHF Amplifier

JFET VHF Amplifier N–Channel — Depletion

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP