N-Channel RF Amplifier

N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50.

JFET VHF Amplifier

JFET VHF Amplifier N–Channel — Depletion

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

JFET VHF Amplifier

文件：252.22 Kbytes Page：6 Pages

小信号 JFET N 沟道

JFET VHP Amplifier

文件：120.43 Kbytes Page：2 Pages

JFET VHF Amplifier

文件：147.16 Kbytes Page：7 Pages

N-Channel RF Amplifier

文件：26.15 Kbytes Page：3 Pages

JFET VHF Amplifier

文件：270.51 Kbytes Page：8 Pages

N-Channel RF Amplifier

文件：26.15 Kbytes Page：3 Pages

JFET VHF Amplifier

文件：147.16 Kbytes Page：7 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：托盘 描述：JFET N-CH 25V 20MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-226-3，TO-92-3 长体 包装：带 描述：JFET N-CH 25V 20MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

JFET VHF Amplifier

文件：147.16 Kbytes Page：7 Pages

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Details complets sur le site du fabricant:

Product Description Full details on the manufacturers website: IDEAL INDUSTRIES, INC

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

0.5/2.5 GHz UHF LO BUFFER AMPLIFIER

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co