600V, 10A Short Circuit Rated IGBT

General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances. Features

封装/外壳：TO-220-3 包装：管件 描述：IGBT NPT 600V 20A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

文件：2.17857 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.33382 Mbytes Page：11 Pages

10A 600V N-channel Enhancement Mode Power MOSFET

文件：976.2 Kbytes Page：11 Pages

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：330.13 Kbytes Page：8 Pages