UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • multi-base st

Fast Recovery Epitaxial Diode (FRED)

Features ● International standard package JEDEC TO-247 AD ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Anti

Common Cathode Fast Recovery Epitaxial Diode (FRED)

Features ● International standard package JEDEC TO-247 AD ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behavior ● Epoxy meets UL 94V-0 Applications ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptibl

HiPerFRED Epitaxial Diode with soft recovery

Features ● International standard package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour ● Epoxy meets UL 94V-0 Applications ● Antiparallel diode for high frequency switching devices ● Antisaturation diode

Single output 20W ~ 660W?

Features ● CE marking (Low Voltage Directive) ● Long life and high reliability Lifetime: 10 years or more, 40°C at full load (Internal fan is spare part) ● Wide operating temperature range: –20 ~ +71°C ● Input voltage range: 85 ~ 132VAC /170 ~ 265VAC ● 77 models, 15W ~ 660W ● 5 year