Silicon Carbide Schottky Diode 650 V, 12 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE SBD 12A 650V D2PAK-3 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode 650 V, 12 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

SILICON PNP TRIPLE DIFFUSED TYPE

2SA1265, A1265 Power Amplifier Application. * Complementary to 2SC3182.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONSQ ·Power amplifier applications

250 (6.4) PC QUICK-FIT MALE TABS

文件：503.41 Kbytes Page：1 Pages

Low Voltage 2MHz Step-Up DC/DC Converter in SC70JW Package

文件：382.84 Kbytes Page：13 Pages

Low Voltage 2MHz Step-Up DC/DC Converter in SC70JW Package

文件：390.68 Kbytes Page：13 Pages