Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

Silicon Carbide Schottky Diode

文件：381.47 Kbytes Page：6 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：650V 6A SIC SBD GEN1.5 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 6A, 650V, D2, D2PAK

Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

Silicon Carbide Schottky Diode

文件：306.53 Kbytes Page：6 Pages