N-Channel PowerTrench MOSFET 60V, 75A, 10.5m?

Features • rDS(ON) = 9.5mΩ (Typ.), VGS = 10V, ID = 75A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =75A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel PowerTrench MOSFET 60V, 50A, 10.5m?

文件：236.88 Kbytes Page：11 Pages

N-Channel PowerTrench MOSFET 60V, 50A, 10.5m?

文件：236.88 Kbytes Page：11 Pages