100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

丝印代码：NZrE；N-Channel Enhancement Mode Power MOSFET

Application Load/Power Switching Interfacing Switching Logic Level Shift

N 沟道，Power Trench® MOSFET，100V，3.7A，120mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 •3.7 A, 100 V\n•RDS(on) = 120 mΩ@ VGS = 10 V\n•RDS(on) = 130 mΩ @ VGS = 6 V\n•快速开关速度\n•低栅极电荷（14nC典型值）\n•高性能沟道技术可实现极低的RDS(on)\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力;

丝印代码：3612；100V N-Channel PowerTrench??MOSFET

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Pre-power amplifier for headphone stereos

The BA3612AKV is configured of a pre-amplifier and a headphone amplifier, and contains internal AMS, B.B, AVLS, and BEEP amplifier functions. Also, this IC can be used in combination with the BA3641FV to enable configuration of recording and playback sets. Features 1) Low current consumption. 2

100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switchin

3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package

DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

丝印代码：BNR；3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package

DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC

OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS description The R3612 is a dual forward-conducting buffered p-gate over voltage protector in a plastic DIP package. It is designed to protect the Ericsson Components PBA 3357/3 DCLIC (Dual Channel Complete Line Interface Circ