Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well su

双 P 沟道，2.5V 指定，PowerTrench® MOSFET，-20V，-6A，30mΩ

这些P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 此类器件非常适合便携式电子应用： 负载开关和电源管理、电池充电和保护电路。 •-6 A，-20 V。 RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V.\n•低栅极电荷（典型值23 nC）\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力。;

Dual P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -5 A RDS(ON)

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05729 Mbytes Page：9 Pages

Bidirectional DC Brush-Type Motor Driver (Io max = 5A)?

Overview The STK6875 is a bridge-type power pack, bidirectional DC brush-type motor driver IC that incorporates Sanyos unique IMST (insulated metal substrate technology) for superior thermal radiation characteristics. In comparision with the STK6860H sereis, it employs power MOSFETs in an H-bridg

1ch Motor Driver

文件：269.04 Kbytes Page：6 Pages

CLOCK GENERATOR/DRIVER (SCHOTTKY MONOLITHIC INTEGRATED CIRCUIT)

文件：584.83 Kbytes Page：11 Pages

Dual P-Channel 20-V (D-S) MOSFET, Common Drain

文件：57.67 Kbytes Page：4 Pages