Dual N & P-Channel PowerTrench짰 MOSFET N-Channel: 40 V, 6.1 A, 26 m廓 P-Channel: -40 V, -5.2 A, 39 m廓

General Description These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel ■ Max rDS(on) = 26 m

双 N 和 P 沟道，PowerTrench® MOSFET，40V

这些双N和P沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 • Q1： N沟道 \n• 最大值 RDS(on) = 26mΩ（VGS = 10V，ID = 6.1A）\n• 最大值 RDS(on) = 31mΩ（VGS = 4.5V，ID = 5.6A）Q2： P沟道\n• 最大值 RDS(on) = 39mΩ（VGS = -10V，ID = -5.2A）;

N- and P-Channel 60-V (D-S) MOSFET

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TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

Standard Banana Jacks, Solderless and Stackable

文件：34.72 Kbytes Page：1 Pages

1.1 Watt Audio Power Amplifier with Fade-In and Fade-Out

文件：612.61 Kbytes Page：14 Pages

1.1 Watt Audio Power Amplifier with Fade-In and Fade-Out

文件：612.61 Kbytes Page：14 Pages