Complementary PowerTrench Half-Bridge MOSFET

General Description This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 9.

互补 PowerTrench® 半桥 MOSFET

此互补MOSFET半桥器件采用飞兆先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 • Q1： N沟道 \n• 9.3 A, 30 V;

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode For optical fiber communications and control systems Features ● Red light emission close to monochromatic light : λP = 680 nm ● High-power output, high-efficiency : PO = 3 mW ● High coupling characteristics and suits to a plastic fiber ● High-speed response :

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages