General Description

This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• Q1: N-Channel

9.3A, 30V RDS(on) = 18 mΩ @ VGS = 10V RDS(on) = 23 mΩ @ VGS = 4.5V

• Q2: P-Channel

–5.6A, –20V RDS(on) = 46 mΩ @ VGS = –4.5V RDS(on) = 63 mΩ @ VGS = –2.5V

Applications

• DC/DC converter

• Power management

• Load switch

• Battery protection