N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

30V N-Channel MOSFET

General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

N-Channel 60-V (D-S) MOSFET

文件：93.32 Kbytes Page：3 Pages

The aim of this document is to give all information

文件：300.8 Kbytes Page：10 Pages