丝印代码：FDS4141；P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

Features Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A High performance trench technology for extremely low rDS(on) RoHS Compliant General Description This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTre

P 沟道，PowerTrench® MOSFET，-40V，-10.8A，13.0mΩ

此 P 沟道 MOSFET 采用飞兆半导体公司专有的 PowerTrench® 技术生产，能够提供较低的 rDS(on)和优化的 BVDSS性能，从而在应用中实现卓越性能，并提供能够减少转换器/逆变器应用功耗的优化开关性能。 •最大 rDS(on) = 13.0 mΩ（VGS = -10 V、 ID = -10.5 A）\n•最大 rDS(on) = 19.0 mΩ（VGS = -4.5 V、ID = -8.4 A）\n•高性能沟道技术可实现极低的 rDS(on)\n•符合 RoHS 标准;

P-Channel PowerTrench짰 MOSFET -40V, -10.8A, 19.0m廓

文件：257.329 Kbytes Page：7 Pages

P-Channel PowerTrench짰 MOSFET -40V, -10.8A, 13.0m廓

文件：217.05 Kbytes Page：6 Pages

P 沟道，PowerTrench® MOSFET，-40V，-10.8A，19.0mΩ

P-Channel PowerTrench® MOSFET -40 V, -10.8 A, 19.0 mΩ •典型 rDS(on) = 10.5 mΩ （VGS = -10 V、ID = -10.5 A）\n•VGS = -4.5V，ID = -8.4A时，典型rDS(on) = 14.8mΩ \n•VGS = -10V时，Qg(TOT) = 35nC（典型值）\n•高性能沟道技术可实现极低的rDS(on)\n•符合 RoHS 标准\n•符合 AEC Q101;

P-Channel PowerTrench짰 MOSFET -40V, -10.8A, 19.0m廓

文件：257.329 Kbytes Page：7 Pages

0.4 INCH (10.2MM) THREE DIGIT STICK DISPLAY

NPN General Purpose Amplifier

NPN General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.

2ch./1packge, - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02???

STK Audio Power Amplifier

AF Power Amplifier (Split Power Supply) (25W 25W min, THD = 0.08)

STK4101V SERIES 2-CHANNEL 6W MIN TO 50W MIN AF POWER AMP (DUAL-SUPPLY) STK4301 SERIES 2-CHANNEL 22W MIN TO 28W MIN AF POWER AMP STK4302 SERIES 2-CHANNEL 5W MIN TO 15W MIN AF POWER AMP.

2ch./1packge, - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02???

STK Audio Power Amplifier