200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge • Fast switching speed •

200V N 沟道 PowerTrench® MOSFET 3.0A，130mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 •3.0 A，200 V\n•RDS(ON) = 130 mΩ @ VGS = 10 V\n•低栅极电荷\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力;

Power Converter Topology and MOSFET Selection for 48-V Telecom

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200V N-Channel PowerTrench MOSFET

文件：107.56 Kbytes Page：6 Pages

200V N-Channel PowerTrench MOSFET

文件：107.56 Kbytes Page：6 Pages

200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lowe

200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lowe

8MHZ DUAL BASEBAND AGC WITH PROGRAMMABLE LOW PASS FILTERING

Product Description The RF2670 is a monolithic integrated circuit specifically designed for direct conversion to baseband QPSK receivers. The part provides dual baseband amplifiers with a 70dB gain range (single pin analog input) and separate I and Q RSSI. On-chip programmable baseband filters ar

SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator with Sync

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SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator with Sync

文件：459.59 Kbytes Page：26 Pages