General Description

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V

• Low gate charge (27 nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability