Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

General Description The FDQ7238AS is designed to replace two single SO- 8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET

Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

General Description The FDQ7238AS is designed to replace two single SO- 8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET

Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

General Description The FDQ7238AS is designed to replace two single SO- 8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET

Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

General Description The FDQ7238S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET T

Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

文件：419.94 Kbytes Page：9 Pages

Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

文件：419.94 Kbytes Page：9 Pages

791 to 821 MHz Small-Cell Power Amplifier Module

Features  InGaP HBT technology  -47 dBc ACPR @ ±10 MHz, +27 dBm  30 dB gain  High efficiency  Low transistor junction temperature  Matched for a 50 Ω system  Low profile miniature surface-mount package; RoHS compliant  Multi-carrier capability  Surface-mount (14-pin, 7  7  1.3

T-1 Sub-Midget Flange Base

T-1 Sub-Midget Flange Base & T-1 Bi-Pin Base (.050)

791 to 821 MHz Small-Cell Power Amplifier Module

Features  InGaP HBT technology  -47 dBc ACPR @ ±10 MHz, +27 dBm  30 dB gain  High efficiency  Low transistor junction temperature  Matched for a 50 Ω system  Low profile miniature surface-mount package; RoHS compliant  Multi-carrier capability  Surface-mount (14-pin, 7  7  1.3

High Efficiency, 1MHz, 3A, 18V Input Synchronous Step Down Regulator

文件：199.04 Kbytes Page：3 Pages

Sub-Midget Flange Base

文件：54.51 Kbytes Page：1 Pages