isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 6.5 A, 1.35 Ω

Features • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Desc

功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，600 V，6.5 A，1.35 Ω，TO-220F

N-Channel MOSFET, FRFET 600V, 6.5A, 1.35廓

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7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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8A 600V N-channel Enhancement Mode Power MOSFET

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