N-Channel MOSFET, FRFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC convert

功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM MOSFET，500 V，4 A，2 Ω，TO-220F

N-CHANNEL POWER MOSFET

文件：2.93481 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：291.11 Kbytes Page：2 Pages

500V N-CHANNEL POWER MOSFET

文件：177.34 Kbytes Page：6 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.07716 Mbytes Page：9 Pages

5A, 500V N-CHANNEL POWER MOSFET

文件：201.77 Kbytes Page：6 Pages