isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

功率 MOSFET，N 沟道，UniFETTM，500 V，5 A，1.4 Ω，TO-220F

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 1.15Ω （典型值）@ VGS = 10V, ID = 2.5A\n•低栅极电荷（典型值 11nC） \n•低 Crss（典型值 5pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力\n•符合 RoHS 标准;

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

PowerMOS transistor Isolated version of PHP8N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow