DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=4.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.75Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-Channel MOSFET 500V, 4.2A, 1.75廓

文件：272.03 Kbytes Page：9 Pages

N 沟道 UniFETTM II FRFET® MOSFET 500V，4.2A，1.75Ω

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-CHANNEL POWER MOSFET

文件：2.93481 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：291.11 Kbytes Page：2 Pages

500V N-CHANNEL POWER MOSFET

文件：177.34 Kbytes Page：6 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.07716 Mbytes Page：9 Pages

5A, 500V N-CHANNEL POWER MOSFET

文件：201.77 Kbytes Page：6 Pages