N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ

Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

功率 MOSFET，N 沟道，UniFETTM，500 V，18 A，265 mΩ，TO-220F

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

Fast Switching

• DESCRIPTION • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters, motor drivers, relay drivers

18A, 500V N-CHANNEL POWER MOSFET

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18A 500V N-channel enhanced field effect transistor

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