型号 功能描述 生产厂家 企业 LOGO 操作
FDPF14N30T

N-Channel UniFET MOSFET 300 V, 14 A, 290 m

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF14N30T产品属性

  • 类型

    描述

  • 型号

    FDPF14N30T

  • 功能描述

    MSOFET N-CH 300V 14A TO-220F

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    UniFET™

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-30 9:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
25+
TO220F
1500
原装正品,假一罚十!
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
FAIRCHILD/仙童
21+
TO220F
6000
全新原装 现货 价优
FAIRCHILD
TO220F
9500
一级代理 原装正品假一罚十价格优势长期供货
FAIRCHILD/仙童
23+
TO-TO-220F
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRCHILD
24+
TO-220F
3000
全新原装环保现货
FAIRCHILD/仙童
24+
TO220F
880000
明嘉莱只做原装正品现货
FAIRCHILD/仙童
22+
TO220F
12245
现货,原厂原装假一罚十!
FSC/ON
23+
原包装原封 □□
1000
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
FAIRCHILD
23+
TO-220-3
24057
##公司主营品牌长期供应100%原装现货可含税提供技术

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