位置：首页 > IC中文资料第3804页 > FDPF14N30T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDPF14N30T | N-Channel UniFET MOSFET 300 V, 14 A, 290 m 文件：393.81 Kbytes Page：8 Pages | Fairchild 仙童半导体 |   | |
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | Fairchild 仙童半导体 | |
FDPF14N30T产品属性
- 类型
描述
- 型号
FDPF14N30T
- 功能描述
MSOFET N-CH 300V 14A TO-220F
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
UniFET™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
13818 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
25+ |
TO220F |
1500 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
24+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
22+ |
TO220F |
12245 |
现货,原厂原装假一罚十! |
|||
FAIRCHILD/仙童 |
21+ |
TO220F |
1709 |
||||
FAIRCHILD |
24+ |
TO-220F |
3000 |
全新原装环保现货 |
|||
FAIRCHILD |
25+23+ |
TO220F |
7286 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD/仙童 |
TO220F |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
FAIRCHILD |
24+ |
TO-220F |
8866 |
||||
FAIRCHILD/仙童 |
24+ |
TO220F |
54000 |
郑重承诺只做原装进口现货 |
FDPF14N30T规格书下载地址
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2019-4-13
DdatasheetPDF页码索引
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