N-Channel MOSFET 500V, 12A, 0.54廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.54Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，12 A，540 mΩ，TO-220F

N-Channel MOSFET 500V, 12A, 0.54廓

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MOSFET N-CH UNIFET2 SINGLE GAGE 500V

500V N-CHANNEL MOSFET

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500V N-CHANNEL MOSFET

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13A, 500V N-CHANNEL POWER MOSFET

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Drain Current ID= 13A@ TC=25C

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13A 500V N-channel enhanced field effect transistor

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