isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 277A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.2mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N 沟道，逻辑电平，PowerTrench® MOSFET，40V，277A，2.2mΩ

N-Channel Logic Level PowerTrench® MOSFET 40 V, 277 A, 2.2 mΩ •RDS(on) = 1.64mΩ （典型值）@ VGS = 10V, ID = 80A\n•QG(tot) = 345nC（典型值）@ VGS = 10V\n•Low Qrr = 77nC\n•UIS 能力（单脉冲和重复脉冲）\n•符合 RoHS 标准;

N-Channel PowerTrench짰 MOSFET 40V, 277A, 2.2m廓

文件：773.37 Kbytes Page：8 Pages

0.800-INCH SEVEN SEGMENT DISPLAYS

0.800-INCH SEVEN SEGMENT DISPLAYS

VTB Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.

VTB Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.

VTP Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.

0.800-INCH SEVEN SEGMENT DISPLAYS

文件：453.28 Kbytes Page：4 Pages