30V N-Channel PowerTrench SyncFET?

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated Schottky

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 76A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

30V N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

64-Common X 132-Segment plus 1-Icon Bit Map Type LCD Controller and Driver

文件：856.37 Kbytes Page：46 Pages

64-Common X 132-Segment plus 1-Icon Bit Map Type LCD Controller and Driver

文件：856.37 Kbytes Page：46 Pages