30V N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 84A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 76A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

30V N-Channel PowerTrench SyncFET?

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP/B6676S includes an integrated Schottky

Wideband IF Receiver Subsystem

文件：1.9312 Mbytes Page：90 Pages

Wideband IF Receiver Subsystem

文件：2.23305 Mbytes Page：90 Pages

Wideband IF Receiver Subsystem

文件：2.23305 Mbytes Page：90 Pages

Wideband IF Receiver Subsystem

文件：1.9312 Mbytes Page：90 Pages

Wideband IF Receiver Subsystem

文件：2.23305 Mbytes Page：90 Pages