DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

功率 MOSFET，N 沟道，UniFETTM II，500 V，4.5 A，1.5 Ω，TO-220

N-Channel MOSFET 500V, 4.2A, 1.75廓

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N-Channel MOSFET 500V, 3.9A, 2.0廓

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isc N-Channel MOSFET Transistor

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N-Channel 650V (D-S) Power MOSFET

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500V N-CHANNEL POWER MOSFET

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5A, 500V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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