200V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 49mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N‐Channel UniFET MOSFET

Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for sw

功率 MOSFET，N 沟道，UniFETTM，200V，52A，49mΩ，TO-220

N-Channel MOSFET 200V, 52A, 0.049廓

文件：1.17936 Mbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=52A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =49mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

200V N-Channel MOSFET

文件：684.2 Kbytes Page：8 Pages

200V N-Channel MOSFET

文件：942.24 Kbytes Page：8 Pages

200V N-Channel MOSFET

文件：684.2 Kbytes Page：8 Pages

200V N-Channel MOSFET

文件：942.24 Kbytes Page：8 Pages