200V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N‐Channel UniFET MOSFET

Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for sw

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 49mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

功率 MOSFET，N 沟道，UniFETTM，200V，52A，49mΩ，TO-220

N-Channel MOSFET 200V, 52A, 0.049廓

文件：1.17936 Mbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=52A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =49mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

200V N-Channel MOSFET

文件：684.2 Kbytes Page：8 Pages

200V N-Channel MOSFET

文件：942.24 Kbytes Page：8 Pages

200V N-Channel MOSFET

文件：684.2 Kbytes Page：8 Pages

200V N-Channel MOSFET

文件：942.24 Kbytes Page：8 Pages