丝印代码：FDP2532；N-Channel PowerTrench® MOSFET 150 V, 79 A, 16 mΩ

Features • RDS(on) = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Consumer Appliances • Synchronous Rectification • Battery Protection Circuit •

N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 86nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • DC/DC conve

isc N-Channel MOSFET Transistor

文件：249.68 Kbytes Page：2 Pages

N 沟道，PowerTrench® MOSFET，150V，79A，16mΩ

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz.

4096 x 8-BIT UV ERASABLE PROM

4096 x 8-BIT UV ERASABLE PROM (N-CHANNEL, SILICON-GATE)

4096 x 8-BIT UV ERASABLE PROM

4096 x 8-BIT UV ERASABLE PROM (N-CHANNEL, SILICON-GATE)

32k-Bit (4k x 8) UV Erasable PROM

文件：222.54 Kbytes Page：5 Pages

32k-Bit (4k x 8) UV Erasable PROM

文件：222.54 Kbytes Page：5 Pages