N-Channel MOSFET 200V, 18A, 0.14廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =18A@ TC=25℃ ·Drain Source Voltage : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.14Ω(Max)@VGS= 10V DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，UniFETTM，FRFET®，200 V，18 A，140 mΩ，TO-220

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 UniFET FRFET® MOSFET 体二极管的反向恢复性能通过寿命控制方式得到加强。 其 trr 小于 100nsec 且反向 dv/dt 抗扰度为 15V/nsec，而一般的平面 MOSFET 产品分别为 200nsec 以上和 4.5V/nsec。 因此，它在 MOSFET 体二极管性能具有重要作用的某些应用中可消除多余的元件，并提高系统的可靠性。 该器件系列适用于开关电源转换器应用，如功 •RDS(on) = 120mΩ （典型值）@ VGS = 10V, ID = 9A\n•低栅极电荷（典型值 20nC） \n•低 Crss（典型值 24pF） \n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

N-Channel MOSFET 200V, 18A, 0.14廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.145 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE I2PAK (TO-262) POWE

POWER FIELD EFFECT TRANSISTOR

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