iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=69A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=69A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

N-ChannelPowerTrenchMOSFET60V,60A,14.6m?

Features •rDS(ON)=12.8mΩ(Typ.),VGS=5V,ID=60A •Qg(tot)=24nC(Typ.),VGS=5V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Motor/BodyLoadControl •ABSSystems •PowertrainManagement •

N-ChannelPowerTrenchMOSFET60V,50A,14.6mohm

文件：227.28 Kbytes Page：11 Pages

iscN-ChannelMOSFETTransistor

文件：303.38 Kbytes Page：2 Pages