N-Channel PowerTrench MOSFET 60V, 60A, 14.6m?

Features • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Qg(tot) = 24nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management •

N-Channel PowerTrench MOSFET 60V, 60A, 14.6m?

Features • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Qg(tot) = 24nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =69A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

MOSFET N-CH 60V 67A TO-220AB