FDP10N60价格

参考价格:¥6.3451

型号:FDP10N60NZ 品牌:FAIRCHILD 备注:这里有FDP10N60多少钱,2025年最近7天走势,今日出价,今日竞价,FDP10N60批发/采购报价,FDP10N60行情走势销售排行榜,FDP10N60报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

N-Channel MOSFET, FRFET 600V, 9A, 0.8廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

UTC

友顺

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:330.13 Kbytes Page:8 Pages

UTC

友顺

N-Channel 6 50V (D-S) Power MOSFET

文件:2.17857 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:2.33382 Mbytes Page:11 Pages

VBSEMI

微碧半导体

10A 600V N-channel Enhancement Mode Power MOSFET

文件:976.2 Kbytes Page:11 Pages

WXDH

东海半导体

FDP10N60产品属性

  • 类型

    描述

  • 型号

    FDP10N60

  • 功能描述

    MOSFET 600N-Channel MOSFET UniFET-II

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
1029
优势代理渠道,原装正品,可全系列订货开增值税票
FSC
03+
TO-220
1029
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
25+
TO-220
1029
原装正品,假一罚十!
FAIRCHILD/仙童
24+
TO220
880000
明嘉莱只做原装正品现货
FAIRCHILD/仙童
03+
TO-220
1029
FSC
21+
TO-220
1029
原装现货假一赔十
FAIRCHILD/仙童
21+
TO-220
30000
优势供应 实单必成 可13点增值税
FAIRCHILD
25+23+
TO220
6757
绝对原装正品全新进口深圳现货
FAIRCHILD
24+
TO-220
8866
FAIRCHILD/仙童
24+
TO220
54000
郑重承诺只做原装进口现货

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