FDP10N60价格

参考价格:¥6.3451

型号:FDP10N60NZ 品牌:FAIRCHILD 备注:这里有FDP10N60多少钱,2025年最近7天走势,今日出价,今日竞价,FDP10N60批发/采购报价,FDP10N60行情走势销售排行榜,FDP10N60报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

N-Channel MOSFET, FRFET 600V, 9A, 0.8廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

UTC

友顺

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:330.13 Kbytes Page:8 Pages

UTC

友顺

N-Channel 6 50V (D-S) Power MOSFET

文件:2.17857 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:2.33382 Mbytes Page:11 Pages

VBSEMI

微碧半导体

10A 600V N-channel Enhancement Mode Power MOSFET

文件:976.2 Kbytes Page:11 Pages

WXDH

东海半导体

FDP10N60产品属性

  • 类型

    描述

  • 型号

    FDP10N60

  • 功能描述

    MOSFET 600N-Channel MOSFET UniFET-II

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-16 11:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
1029
优势代理渠道,原装正品,可全系列订货开增值税票
FAIRCHILD/仙童
24+
TO220
9600
原装现货,优势供应,支持实单!
FEIHONG/飞虹
23+
TO-220220F251252
425120
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRCHILD
23+
TO220
5000
专注配单,只做原装进口现货
FAIRCHILD
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
FAIRCHILD
23+
TO220
5000
专注配单,只做原装进口现货
FAIRCHILD/仙童
23+
TO-220
24190
原装正品代理渠道价格优势
FAIRCHILD/仙童
2447
TO220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
FAIRCHILD
24+
TO-220
8866

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