Single P-Channel PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well sui

Single P-Channel MOSFET

Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. higher power handling capability. VDS (V) = -30V D= -2A (VGS=10V) RDS(ON)

P-Channel 2.5 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of i

Single P-Channel MOSFET

Features Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. higher power handling capability. VDS (V) = -30V D= -2A (VGS=10V) RDS(ON)

Single P-Channel PowerTrenchTM MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well sui

Single P-Channel, PowerTrench MOSFET

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